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Telecommunications and Radio Engineering
SJR: 0.203 SNIP: 0.44 CiteScore™: 1

ISSN Imprimer: 0040-2508
ISSN En ligne: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v70.i15.80
pages 1379-1385

A LOW VOLTAGE-TYPE SENSE AMPLIFIER DESIGN FOR EEPROM MEMORY

L. F. Rahman
Department of Electrical, Electronic and Systems Engineering University Kebangsaan Malaysia 43600 UKM, Bangi, Selangor, Malaysia
Mamun Bin Ibne Reaz
Universiti Kebangsaan Malaysia
M. A. M. Ali
Department of Electrical, Electronic and Systems Engineering University Kebangsaan Malaysia 43600 UKM, Bangi, Selangor, Malaysia

RÉSUMÉ

To ensure both the reduced reading power and the enhanced reliability of the nonvolatile memories like EEPROM embedded in RFID transponders, a new low voltage-type sense amplifier (SA) is designed. The topology of the designed sense amplifier uses a voltage sensing method, with low cost, low power consumption as well as high reliability. The sense amplifier was designed in CEDEC 0.18-μm CMOS embedded EEPROM process with the 3.7 V power supply. Simulation results showed that the circuit is able to operate between 1 V to 3.7 V within the temperature range from −25° C to 125° C. The novel topology allows the circuit to function with power supplies as low as 1 V. The simulations show that the new voltage-type sense amplifier required lower voltage than the previously reported voltage-type sense amplifier by Liu et al. Additionally the MOS size used for this circuit is 0.18-μm, which reduced the size of the circuit.


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