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Telecommunications and Radio Engineering

Publication de 12  numéros par an

ISSN Imprimer: 0040-2508

ISSN En ligne: 1943-6009

SJR: 0.185 SNIP: 0.268 CiteScore™:: 1.5 H-Index: 22

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Application of the Green Function Method to the Problem of the Temperature Dependence of Characteristics of Vertical Cavity Semiconductor Lasers

Volume 52, Numéro 12, 1998, pp. 89-92
DOI: 10.1615/TelecomRadEng.v52.i12.190
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RÉSUMÉ

In designing modern communication lines, telecommunications, and information processing centers, an important problem is to create laser radiation sources with a wide modulation band, ultra-small size, high efficiency, and low current consumption. In many cases (high-speed transmitters, parallel optical signal processing systems, etc.) it is necessary to produce two-dimensional laser matrices. In modern systems, radiation sources of special configuration are used, namely, vertical cavity surface emitting lasers (VCSEL's), in which the direction of laser radiation is perpendicular to the plane of constituent layers. A laser of this type has numerous advantages: small resonator length (transverse diameter is 1−20 μm), sufficiently high modulation speed, low threshold current (record values are several microamperes), low control current, radiation of a single transverse mode, circular cross-section of the radiated beam, high reliability, high efficiency, and a wide operating temperature range (−50−130° C).
Due to the fast development of VCSEL technology and fabrication, it became possible to use these devices in modern data transfer systems [1-3]; therefore, one must seriously study device characteristics, threshold current, transverse mode structure, and temperature properties. VCSEL-based experiments showed that the relaxation oscillation frequency can be as high as 71 GHz. Moreover, the maximum realized modulation bandwidth for devices with oxidized layer is 17 GHz. This band narrowing is related to the internal processes of carrier transport and capture [9]. The width of the modulation band can be increased by increasing the doping level of the active region and suppressing higher-order modes. With increasing current, the lasers of the type considered (VCSEL) begin to radiate multiple modes [4], and this results in the widening of the optical spectrum and restricts the use of VCSEL's in high-speed systems. The authors of [5, 6] explained this feature of the VCSEL operation by the effect of spatial hole burning. This effect modifies the distribution of the refraction factor and amplification in the cavity. Due to the presence of current spreading and the complicated heating process of the device, an appreciable temperature difference between the active region and the substrate appears to give rise to an increase in the refraction factor [7]. It should be noted that the effect of spatial hole burning and the injected carriers affect the behavior of transverse modes in different ways.
In this paper we present a method taking account of the laser temperature variation for a model that describes the carrier distribution and optical field inside the cavity.

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