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Telecommunications and Radio Engineering
SJR: 0.203 SNIP: 0.44 CiteScore™: 1

ISSN Imprimer: 0040-2508
ISSN En ligne: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v72.i17.40
pages 1589-1600

GENERATION EFFICIENCY OF RESONANT-TUNNEL BARRIER DIODES IN SANDWICH-TYPE STRUCTURES

E. D. Prokhorov
V. Karazin National University of Kharkiv, 4, Svoboda Sq., Kharkiv, 61077, Ukraine
O. V. Botsula
V. Karazin National University of Kharkiv, 4, Svoboda Sq., Kharkiv, 61022, Ukraine
O. A. Klimenko
V. Karazin National University of Kharkov, 4, Svoboda Square, Kharkov 61077, Ukraine
I. P. Storozhenko
V. Karazin National University of Kharkiv, 4, Svoboda Sq., Kharkiv, 61077; National University of Pharmacy 53, Pushkinskaya Str., Kharkiv, 61002, Ukraine

RÉSUMÉ

The current-voltage characteristics and the generation efficiency of diodes with resonant tunnel barriers implemented in the GaAs sandwich-type structures are studied. We consider the models of diodes with single-level and two-level barriers. The frequency limit of the diode with resonant-tunnel barriers was estimated. A possibility of harmonic generation and frequency multiplication of diodes with reasonable-tunneling barriers in the range from tens to hundreds GHz was shown.


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