Publication de 12 numéros par an
ISSN Imprimer: 0040-2508
ISSN En ligne: 1943-6009
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Magnetoresistance of Magnetic Tunneling Junctions with Step-Like Potential Barriers
RÉSUMÉ
The influence of the bias voltage on the magnetoresistance of a magnetic tunneling junction with a step-like potential barrier has been studied theoretically in the frame of a two-band model of free electrons in ferromagnetic electrodes. It is shown that the dependence of the magnetoresistance of the magnetic tunneling junction on the bias voltage can be different according to the type and the thickness of the isolators forming a step-like tunneling potential barrier. It has been found that the magnetoresistance of the magnetic tunneling junction can change its sign and oscillate with increasing bias voltage. It has been shown that the sign reversal of the magnetoresistance is related to the increase in the transmission coefficient of majority electrons through the magnetic tunneling junction as the mutual orientation of magnetization of ferromagnetic electrodes switches from parallel to antiparallel.