RT Journal Article
ID 783d43f84f6fec6e
A1 Lukin, K. A.
A1 Maksymov, P. P.
T1 DOUBLE SPLITTING OF MULTIPLICATION LAYER IN AVALANCHE GENERATOR DIODES AND GENERATION OF TWO-FREQUENCY SELF-EXCITED OSCILLATIONS
JF Telecommunications and Radio Engineering
JO TRE
YR 2016
FD 2017-01-30
VO 75
IS 16
SP 1483
OP 1494
K1 avalanche-generator diode
K1 double splitting of multiplication layer
K1 output power spectrum
K1 electronic efficiency
K1 TRAPATT-regime
AB Development of high-power sources of electromagnetic oscillations in microwave and THz frequency bands is a challenge for radio-electronic engineers. Design of avalanche-generator diodes that generate two phase locked oscillations in microwave and THz ranges is considered
in the paper. Summation of two generating oscillations with either close or different frequencies allows managing power and spectral characteristics of the output signal. The physical processes occurring in the avalanche-generator diodes on the basis of abrupt Si and GaAs p–n-junctions
at the constant reverse biased voltage are investigated. The effect of double splitting of the
multiplication layer has been revealed. In the suggested avalanche-generator diodes, regular
and chaotic self-oscillations of electron and hole components of the output power are excited in
p- and n-regions of the p–n-junction, respectively.
PB Begell House
LK https://www.dl.begellhouse.com/journals/0632a9d54950b268,6250279176a39edb,783d43f84f6fec6e.html