RT Journal Article ID 5eb0473919a0ae97 A1 Arkhilyuk, L. I. A1 Makhniy, Victor P. A1 Sletov, M. M. A1 Gorley, V. V. A1 Tkachenko, I. V. T1 Defect Formation Mechanisms for ZnSe with Isovalent Oxygen Impurity JF Telecommunications and Radio Engineering JO TRE YR 2007 FD 2007-10-17 VO 66 IS 13 SP 1205 OP 1211 AB Concentration of equilibrium point defects for ZnSe crystals doped with oxygen to the concentration of 1019cm−3 at T=1150K was calculated in the framework of the quasi-chemical reaction approach. Calculation results confirm electron conductivity of the samples. Selenium vacancies and interstitial zinc are proved to be the dominating impurities responsible for the formation of red and blue photoluminescence bands, as experimentally observed for ZnSe:O samples. PB Begell House LK https://www.dl.begellhouse.com/journals/0632a9d54950b268,2d367316176c00c6,5eb0473919a0ae97.html