RT Journal Article
ID 5eb0473919a0ae97
A1 Arkhilyuk, L. I.
A1 Makhniy, Victor P.
A1 Sletov, M. M.
A1 Gorley, V. V.
A1 Tkachenko, I. V.
T1 Defect Formation Mechanisms for ZnSe with Isovalent Oxygen Impurity
JF Telecommunications and Radio Engineering
JO TRE
YR 2007
FD 2007-10-17
VO 66
IS 13
SP 1205
OP 1211
AB Concentration of equilibrium point defects for ZnSe crystals doped with oxygen to the concentration of 1019cm−3 at T=1150K was calculated in the framework of the quasi-chemical reaction approach. Calculation results confirm electron conductivity of the samples. Selenium vacancies and interstitial zinc are proved to be the dominating impurities responsible for the formation of red and blue photoluminescence bands, as experimentally observed for ZnSe:O samples.
PB Begell House
LK https://www.dl.begellhouse.com/journals/0632a9d54950b268,2d367316176c00c6,5eb0473919a0ae97.html