RT Journal Article
ID 3653bfba19b754f5
A1 Prokhorov, E. D.
A1 Botsula, O. V.
A1 Pavlenko, D. V.
T1 HARMONIC GENERATION AND FREQUENCY MULTIPLICATION CAUSED BY THE IMPACT IONIZATION IN GaN-DIODES
JF Telecommunications and Radio Engineering
JO TRE
YR 2010
FD 2010-11-16
VO 69
IS 15
SP 1391
OP 1400
K1 nitrides
K1 negative differential conductivity
K1 impact ionization
K1 harmonic generation
AB The object of the consideration is the impact ionization in GaN diodes. The study revealed rich potentialities of the considered compounds, with the impact ionization in the diodes, for the application in centimeter and millimeter wave ranges, as they can provide up to five-fold over-threshold voltage and the efficiency ranging from 11 to 13%. The achievable harmonic generation efficiency of GaN diodes has been demonstrated. The frequency multiplication by the impact ionization in GaN diodes has been considered. The impact ionization in GaN diodes can substantially increase the frequency conversion coefficient, so that at the second harmonic is reaches 40%.
PB Begell House
LK https://www.dl.begellhouse.com/journals/0632a9d54950b268,758fa42914b60657,3653bfba19b754f5.html