RT Journal Article ID 0092f73d29de48a4 A1 Rudyakova, A. N. A1 Rassokhina, Yu. V. A1 Krizhanovskii, V. G. T1 High-Efficiency Microwave BJT Power Amplifier JF Telecommunications and Radio Engineering JO TRE YR 2006 FD 2006-05-01 VO 65 IS 1-5 SP 459 OP 471 AB The analysis of the high-performance microwave power amplifier has been carried out. The way of the partial power passage of the input signal on the output has been presented in power amplifier. The described way of the efficiency increase is the especially effective for the devices working with the low power amplification. In these devices the input signal power is of the same order as output one. The amplifier operation on the transistor KТ911 has been modeled. The total efficiency of the amplifier was 87.5%. The collector current in the significant part of the period was negative. This leaded to the decrease of the average dissipated power by transistor and the efficiency increase in parallel with the remaining positive voltage of the collector-emitter. PB Begell House LK https://www.dl.begellhouse.com/journals/0632a9d54950b268,37cff76f5929b04d,0092f73d29de48a4.html