Publicado 6 números por año
ISSN Imprimir: 1543-1649
ISSN En Línea: 1940-4352
Indexed in
NUMERICAL STUDY OF p − n INTERFACE EFFECTS
SINOPSIS
In this study, we simulated piezoelectric enhancements of p − n core-shel nanowires with an inner-core cylinder of n-type ZnO and an outer-shell cylinder of p-type poly-3-hexylthiophene. Compared with conventional n-type ZnO nanowires, the piezoelectric potential of p − n core-shell nanowires with the same dimensions (core part; n-ZnO), calculated by subtracting the electrical potential of the uncompressed core-shell nanowires [φele (Tz = 0)] from that of compressed nanowires (φtotalele) according to φp − npiezo = φtotal ele − φele (Tz = 0), are enhanced by more than a factor of 10. As the magnitude of vertical external compression (Tz) is varied from 0 to −9×107 N/m2, the piezoelectric potential of the model system increases. This improvement in the piezoelectric potential is attributed to the presence of a depletion zone at the p − n interface (space-charge region), which reduces the carrier screening of the piezoelectric potential by removing free carriers. Our results suggest that the structure proposed here for p − n core-shell nanowires could improve the performance of photovoltaic systems.