Volumen 23,
Edición 1, 2019,
pp. 57-70
DOI: 10.1615/HighTempMatProc.2019029959
Get access
P. B. Lagov
Department of Semiconductor Electronics and Semiconductor Physics, National University of Science and Technology "MISiS" (NUST "MISiS"),
Moscow, 119049, Russia; Laboratory of Radiation Technologies, A.N. Frumkin Institute of Physical
Chemistry and Electrochemistry, Russian Academy of Sciences (IPCE RAS), Moscow, 119071, Russia
Vladimir M. Maslovsky
Department of Micro- and Nanoelectronics, Moscow Institute of Physics and Technology (State University), 9 Institutskii Lane, Dolgoprudnyi, Moscow Region, 141700 Russia
Yu. S. Pavlov
Laboratory of Radiation Technologies, A.N. Frumkin Institute of Physical
Chemistry and Electrochemistry, Russian Academy of Sciences (IPCE RAS),
Moscow, 119071, Russia
E. S. Rogovsky
Department of Semiconductor Electronics and Semiconductor Physics,
National University of Science and Technology "MISiS" (NUST "MISiS"),
Moscow, 119049, Russia
A. S. Drenin
Department of Semiconductor Electronics and Semiconductor Physics,
National University of Science and Technology "MISiS" (NUST "MISiS"),
Moscow, 119049, Russia
Vitalii A. Bondariev
Department of Electrical Devices and High Voltage Technology, Lublin University of Technology, 38D Nadbystrzycka Str., Lublin 20-001,
Poland
SINOPSIS
Inductively coupled Ar/SF6 plasma (ICP) etching p-type germanium (Ge) substrate used for a multifunction solar cell (MJ SC) was investigated at different ICP power levels and SF6 flow rates at a constant working pressure of 7 Pa. The etching rate of Ge increases linearly from 11.9 to 19.4 μm/min and surface roughness decreases as the ICP power level increases from 400 to 650 W at SF6 flow rate of 300 sccm. Also, the etching rate of Ge increases by a power law from 8.0 to 16.7 μm/min as the SF6 flow rate increases from 50 to 300 sccm at ICP power of 570 W. OES and XPS studies were carried out using NIST databases. Identifications for some calculated Ritz lines were suggested.
IF:
0.4
