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Telecommunications and Radio Engineering
SJR: 0.203 SNIP: 0.44 CiteScore™: 1

ISSN Imprimir: 0040-2508
ISSN En Línea: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v69.i10.90
pages 925-937

MULTIFREQUENCY SELF-OSCILLATIONS IN SEMICONDUCTOR STRUCTURES WITH TWO COUPLED AVALANCHE P-N JUNCTIONS

SINOPSIS

Results of numerical solution to the equations of drift-diffusion model (DDT) of semiconductor pn - i - pn structures with abrupt avalanche p-n junctions are presented. The multifrequency self-oscillation mode in Ge-, Si- and GaAs-based pn - i - pn structures with a dc reverse bias has been found can operate. The excitation mechanism of self oscillations has been investigated and the generated spectrum has been analyzed. It is shown that semiconductor structures with abrupt p-n junctions represent a kind of the sustained-excited oscillation system. They can be used for designing multifrequency generators of the microwave frequency range.


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