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Telecommunications and Radio Engineering
SJR: 0.203 SNIP: 0.44 CiteScore™: 1

ISSN Imprimir: 0040-2508
ISSN En Línea: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v75.i16.70
pages 1495-1504

AlGaInAs GRADED-GAP GUNN DIODE

I. P. Storozhenko
V. Karazin National University of Kharkiv, 4, Svoboda Sq., Kharkiv, 61077; National University of Pharmacy 53, Pushkinskaya Str., Kharkiv, 61002, Ukraine
M. V. Kaydash
National University of Pharmacy 53, Pushkinskaya Str. Kharkiv, 61002, Ukraine

SINOPSIS

The Gunn diodes are used as the active elements for generating electromagnetic waves in the millimeter range. An urgent task of today is to increase their cut-off frequency and output power. One way of doing this is to use graded-gap semiconductors. The paper presents the results of numerical experiments on the electromagnetic waves generation by applying Gunn diodes based on a graded-gap AlGaAs-GaAs-InGaAs compound. The numerical simulation has been provided by means of the temperature model of intervalley electron transition in the graded-gap semiconductors. The length of the diode active area was 2.5 m with the concentration of ionized impurities therein 1016 cm–3. We have shown that the AlGaAs-GaAs-InGaAs-diodes can be used as active elements for generating electromagnetic oscillations in the millimeter wave range. In GaAs-InxGa1–xAs- and Al0.2Ga0.8As-GaAs-InxGa1–xAs-diodes, the output power increases almost linear with InAs percentage in the range from 0 to 50%. As it turned out GaAs-Ga0.5In0.5As-diode has the greatest value of the output power P = 12.2 kW·cm–2 at a frequency of 45 GHz and efficiency of η = 10.5%. Al0.2Ga0.8As-GaAs-In0.5Ga0.5As-diode has the greatest generation efficiency of η = 11.3% at P = 10.6 kW·cm–2 and f = 41 GHz output power and generation efficiency of Al0.2Ga0.8As-GaAs-diode in 2 to 3 times lower than the parameters of mentioned above diodes. Our findings expand knowledge of the physical processes of carrier transport in complex semiconductor structures and can be used for development of new high-performance devices based on A3B5 semiconductors.


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