Publicado 12 números por año
ISSN Imprimir: 0040-2508
ISSN En Línea: 1943-6009
Indexed in
Silicon Radiation Detectors − Materials and Application
SINOPSIS
Nowadays, silicon detectors of nuclear radiations are available in a wide diversity of topologies and types. This diversity has become possible due to continuous increase in the quality and the diameter of the grown Si-monocrystals, development of new equipment technologies and research techniques, which are involved in the development of detectors. We have considered the essential characteristics of four main groups of the detectors on the basis of different technologies for formation of the p-n-transitions: diffusion, ion-implanted, surface-barrier and lithium-drift, with the relevant requirements to the silicon crystals. Crystal-type imperfections related to compensation with the lithium ions are represented. Equipment technologies and research techniques are described. The topologies of coordinate-sensitive detectors for recording of traces of the high-energy particles and X-ray crystallography are discussed. The experimental results obtained with using of the above devices are provided.