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Telecommunications and Radio Engineering
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ISSN Imprimir: 0040-2508
ISSN En Línea: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v78.i11.90
pages 1027-1032

THE INFLUENCE OF γ-IRRADIATION ON ELECTRICAL PROPERTIES OF CdIn2Te4 CRYSTALS

O.G. Grushka
Institute of Physical-Technical and Computer Science, Yuriy Fedkovych Chernivtsi National University, 2 Kotsyubinsky Str., 58012 Chernivtsi, Ukraine
V.T. Maslyuk
Institute of Electron Physics of Ukrainian National Academy of Science, 88016 Uzhgorod, Ukraine
S.M. Chupyra
Institute of Physical-Technical and Computer Science, Yuriy Fedkovych Chernivtsi National University, 2 Kotsyubinsky Str., 58012 Chernivtsi, Ukraine
O.M. Myslyuk
Institute of Physical-Technical and Computer Science, Yuriy Fedkovych Chernivtsi National University, 2 Kotsyubinsky Str., 58012 Chernivtsi, Ukraine
O. M. Slyotov
Institute of Physical-Technical and Computer Science, Yu. Fedkovych Chernivtsi National University, 2 Kotsyubinsky Str., 58012 Chernivtsi, Ukraine

SINOPSIS

The influence of γ-irradiation on the basic electrical parameters of CdIn2Te4 crystals in the temperature range of 240-410 K has been investigated. It was established that the noticeable changes in the parameters of the irradiated samples take place under irradiation doses D > 1·108 Roentgen. It was shown that under dose D = 1.2·108 Roentgen and additional dose D = 4·108 Roentgen the parameters change slightly at high temperature T > 350 K and at T < 350 K the changes of parameters increase with rising γ-irradiation dose. The anomalous increase of the Hall mobility in the irradiated samples was found and the explanation of the obtained effect nature was proposed. It was shown that the main cause of the changes of the electrical parameters under the influence of γ-irradiation is the Fermi-level displacement within the energy gap of CdIn2Te4 crystals.

REFERENCIAS

  1. Lebedev, A.A., Ivanov, and Strokan, N.B., (2004) Radiation Resistance of SiC and Nuclear-Radiation Detectors Based on SiC Films, Semiconductors, 38(2), pp. 125-147.

  2. Brudnyi, V.N., Grinyaev, S.N., and Kolin, N.G., (2003) Electronic properties of irradiated semiconductors. A model of the Fermi level pinning, Semiconductors 37(5), pp. 537-545.

  3. Lebedev, A.A., Davydovskaya, K.S., Yakimenko, A.N., Strel'chuk, A.M., and Kozlovskii, V.V., (2017) A study of the effect of electron and proton irradiation on 4H-SiC device structures, Technical Physics Letters, 43(11), pp. 1027-1029.

  4. Gaidar, G.P., (2014) On the kinetics of electron processes in <sup>60</sup>Co &#947;-irradiated n-Ge single crystals, Semiconductors, 48(9), pp. 1141-1144.

  5. Gal'chinetskii, L.P., Koshkin, V.M., Kumakov, V.M. et al., (1972) The effect of radiation resistance of semiconductors with stoichiometric vacancies, Sov. Phys. Solid State, 14(2), pp. 646-648, (in Russian).

  6. Koshkin, V.M., Dmitriev, Yu.N., Zabrodskii, Yu.R. et al., (1984) Anomalous radiation resistance of loose crystalline structures, Sov. Phys. Semicond, 18(8), pp. 1373-1378, (in Russian).

  7. Gorley, P.M., Grushka, O.G., Vorobets', O.I., and Grushka, Z.M., (2006) Temperature Dependence of the Concentration of Carriers in CdIn<sub>2</sub>Te<sub>4</sub> Crystals, Ukr. J. Phys., 51(5), pp. 475-477, (in Russian).

  8. Grushka, O.G., Chupyra, S.M., Bilichuk, S.V., and Parfenyuk, O.A., (2018) Electronic Processes in CdIn<sub>2</sub>Te<sub>4</sub> Crystals, Semiconductors, 52(8), pp. 973-976.

  9. Shalimova, K.V., (1985) Physics of Semiconductors, Moscow, Russia: Energoatomizdat, 392 p., (in Russian).

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