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Telecommunications and Radio Engineering
SJR: 0.203 SNIP: 0.44 CiteScore™: 1

ISSN Imprimir: 0040-2508
ISSN En Línea: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v65.i5.80
pages 459-471

High-Efficiency Microwave BJT Power Amplifier

A. N. Rudyakova
Donetsk National University, 24, Universitetskaja Str., Donetsk, 83055, Ukraine
Yu. V. Rassokhina
Vasyl' Stus Donetsk National University, Ministry of Education and Science of Ukraine, 21 600-richa St., Vinnytsia, 21021, Ukraine
V. G. Krizhanovskii
Vasyl' Stus Donetsk National University, Ministry of Education and Science of Ukraine, 21 600-richa St., Vinnytsia, 21021, Ukraine

SINOPSIS

The analysis of the high-performance microwave power amplifier has been carried out. The way of the partial power passage of the input signal on the output has been presented in power amplifier. The described way of the efficiency increase is the especially effective for the devices working with the low power amplification. In these devices the input signal power is of the same order as output one. The amplifier operation on the transistor KТ911 has been modeled. The total efficiency of the amplifier was 87.5%. The collector current in the significant part of the period was negative. This leaded to the decrease of the average dissipated power by transistor and the efficiency increase in parallel with the remaining positive voltage of the collector-emitter.


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