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Telecommunications and Radio Engineering
SJR: 0.203 SNIP: 0.44 CiteScore™: 1

ISSN Imprimir: 0040-2508
ISSN En Línea: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v66.i13.60
pages 1197-1204

Width of Current-Voltage Characteristics of AlxGa1-XN Gunn Diodes

D. V. Pavlenko
V. Karazin National University of Kharkov, 4, Svoboda Sq., Kharkiv, 61077, Ukraine
E. D. Prokhorov
V. Karazin National University of Kharkiv, 4, Svoboda Sq., Kharkiv, 61077, Ukraine

SINOPSIS

The impact ionization in GaN, AlN and their compounds are under consideration. The width of current-voltage characteristics and the voltages enough for the impact ionization be developed in Gunn diodes made of GaN, AlN and their compounds are defined.


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