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Telecommunications and Radio Engineering
SJR: 0.203 SNIP: 0.44 CiteScore™: 1

ISSN Imprimir: 0040-2508
ISSN En Línea: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v66.i13.70
pages 1205-1211

Defect Formation Mechanisms for ZnSe with Isovalent Oxygen Impurity

L. I. Arkhilyuk
Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky St., 58012 Chernivtsi, Ukraine
Victor P. Makhniy
Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky St., Chernivtsi, 58012, Ukraine
M. M. Sletov
Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky St., 58012 Chernivtsi, Ukraine
V. V. Gorley
Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky St., 58012 Chernivtsi, Ukraine
I. V. Tkachenko
Chernivtsi Institute of Trade and Economics, 7 Tsentralna Ploshcha, 58002 Chernivtsi, Ukraine

SINOPSIS

Concentration of equilibrium point defects for ZnSe crystals doped with oxygen to the concentration of 1019cm−3 at T=1150K was calculated in the framework of the quasi-chemical reaction approach. Calculation results confirm electron conductivity of the samples. Selenium vacancies and interstitial zinc are proved to be the dominating impurities responsible for the formation of red and blue photoluminescence bands, as experimentally observed for ZnSe:O samples.


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