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Telecommunications and Radio Engineering
SJR: 0.203 SNIP: 0.44 CiteScore™: 1

ISSN Imprimir: 0040-2508
ISSN En Línea: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v66.i13.50
pages 1187-1196

Nanocrystalline Silicon Based Heterostructure Converters

V. M. Koval
National Technological University of Ukraine - KPI, Kiev, Ukraine
A. N. Shmyryova
National Technological University of Ukraine - KPI, Kiev, Ukraine

SINOPSIS

A new photo sensitivity semiconductor material and a heterostructure converter on its basis characterized with increased photo sensitivity in visible and ultraviolet bands of the spectrum, are created. The influence of deposition parameters, chemical composition and the conditions for subsequent re-crystallization of nanocrystalline silicon thin films upon the sensitivity of heterostructures are determined.


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