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International Journal for Multiscale Computational Engineering
Impact-faktor: 1.016 5-jähriger Impact-Faktor: 1.194 SJR: 0.554 SNIP: 0.68 CiteScore™: 1.18

ISSN Druckformat: 1543-1649
ISSN Online: 1940-4352

International Journal for Multiscale Computational Engineering

DOI: 10.1615/IntJMultCompEng.v3.i1.80
pages 107-133

Review: Multiscale Thermal Modeling in Nanoelectronics

Sanjiv Sinha
Thermosciences Division, Department of Mechanical Engineering, Stanford University, Stanford, CA 94305-3030, USA
Kenneth E. Goodson
Thermosciences Division, Mechanical Engineering Department, Stanford University Bldg. 530, 440 Escondido Mall, Stanford, CA 94305-3030, USA

ABSTRAKT

Subcontinuum phonon conduction phenomena impede the cooling of field-effect transistors with gate lengths less than 100 nm, which degrades their performance and reliability. Thermal modeling of these nanodevices requires attention to a broad range of length scales and physical phenomena, ranging from continuum heat diffusion to atomic-scale interactions and phonon confinement. This review describes the state of the art in subcontinuum thermal modeling. Although the focus is on the silicon field-effect transistor, the models are general enough to apply to other semiconductor devices as well. Special attention is given to the recent advances in applying statistical and atomistic simulation methods to thermal transport.


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