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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
ESCI SJR: 0.176 SNIP: 0.48 CiteScore™: 1.3

ISSN Druckformat: 1093-3611
ISSN Online: 1940-4360

High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

DOI: 10.1615/HighTempMatProc.2018026506
pages 1-6

CHARACTERISTIC FEATURES OF HEATING SEMICONDUCTOR SILICON STRUCTURES DURING RAPID THERMAL TREATMENT IN THE VLSI TECHNOLOGY

Vitalii A. Bondariev
Department of Electrical Devices and High Voltage Technology, Lublin University of Technology, 38D Nadbystrzycka Str., Lublin, 20–618, Poland
Valentina A. Gorushko
JSC "INTEGRAL" − Holding Management Company, 121A Kazinets Str., Minsk, 220108, Belarus
Vladimir A. Pilipenko
JSC "INTEGRAL" − Holding Management Company, 121A Kazinets Str., Minsk, 220108, Belarus
Vitaly A. Solodukha
JSC "INTEGRAL" − Holding Management Company, 121A Kazinets Str., Minsk, 220108, Belarus

ABSTRAKT

By means of the Fourier-spectroscopy method the influence of the conductivity type, doping level, orientation, as well as the state of an idle surface of silicon wafers on the absorption ratio during rapid thermal treatment and, consequently, on the temperature and rate of their heating is shown.


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