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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
ESCI SJR: 0.176 SNIP: 0.48 CiteScore™: 1.3

ISSN Druckformat: 1093-3611
ISSN Online: 1940-4360

High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

DOI: 10.1615/HighTempMatProc.v15.i2.50
pages 123-128

EFFECT OF INTERELECTRODE SPACE ON PROPERTIES OF SIH4/H2 DEPOSITION DISCHARGES OPERATING AT DIFFERENT RADIO FREQUENCIES

E. Amanatides
Plasma Technology Laboratory -Dept. of Chem. Engineering-University of Patras, P.O.Box 1407, 26500 Patra, Greece
Dimitris Mataras
Plasma Technology Laboratory -Dept. of Chem. Engineering-University of Patras, P.O.Box 1407, 26500 Patra, Greece
Dimitrious E. Rapakoulias
Plasma Technology Lab, Dept. Chem. Engineering, University of Patras, P.O.Box 1407, 26500 Patra, Greece

ABSTRAKT

The combined effect of excitation frequency and the variation of the interelectrode space on properties of highly diluted silane in hydrogen discharges used for the deposition of μc−Si:H, is presented. For constant operation voltage, the increase of the electrode gap leads to a continuous increase of the power consumed in the discharge at 30 MHz, while at 50 MHz changes on the interelectrode space has almost no effect on the total power dissipation. At both frequencies the increase of the interelectrode space leads to an optimum in radical production that as frequency increases is displaced to lower electrode gaps. Film growth rate appears an optimal that coincides to the maximum of radical production at both frequencies, revealing that μc−Si:H deposition rate strongly depends on radicals (SiH2, Si2H4) that undergo rather fast reactions in the gas phase.

REFERENZEN

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  4. Mataras, D., Cavadias, S., and Rapakoulias, D. E., Power dissipation mechanisms in radio-frequency driven silane discharges: The influence of discharge geometry.

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