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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
ESCI SJR: 0.176 SNIP: 0.48 CiteScore™: 1.3

ISSN Druckformat: 1093-3611
ISSN Online: 1940-4360

High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

DOI: 10.1615/HighTempMatProc.v10.i3.90
pages 457-466

LOW TEMPERATURE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION OF CARBON FILMS ON DIFFERENT SUBSTRATES

A. Ya. Vinogradov
A.F. Ioffe Physical-Technical Institute RAS, Polytechnicheskaya 26, 194021, St.-Petersburg, Russia
A. N. Andronov
St.-Petersburg State Polytechnical University, Polytechnicheskaya 29, 195251, St-Petersburg, Russia
A. B Ustinov
St.-Petersburg State Polytechnical University, Polytechnicheskaya 29, 195251, St-Petersburg, Russia
K. E. Orlov
St.-Petersburg State Polytechnical University, Polytechnicheskaya 29, 195251, St-Petersburg, Russia
A. S. Smirnov
St.-Petersburg State Polytechnical University, Polytechnicheskaya 29, 195251, St-Petersburg, Russia

ABSTRAKT

Polymer and diamond like carbon thin films were deposited at temperature below 250°C by high frequency (40−60 MHz) plasma enhanced chemical vapor deposition. The films have been successfully deposited on metal (Ti, Cu, Mo, Ta, Ni, Pt), silicon, germanium, ceramic, quarts and glass flat substrates as well as on 3-D objects: metal balls, washer, tips, cones. Electron field emission, optical and electrical properties, mechanical and tribological behavior of the films were studied in comparison with their structure, phase and chemical composition. Plasma pre-treatment of the substrate, ion bombardment and etching of growing film surface were found to be the key factors of the film deposition process.


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