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ISSN Druckformat: 1065-3090
ISSN Online: 1940-4336
Indexed in
VISUALIZATION IN NANOTECHNOLOGY: LOW-K MATERIALS
ABSTRAKT
Porous dielectric materials with low dielectric constants (low-k, k = 1.8−2.5 have been used in integrated circuits for a long time to reduce RC time delays. Typical pores in low-k films are of size from 0.8 nm to 3.6 nm and can be observed with a scanning electron microscope. Normally, two-frequency discharge plasma is applied to modify surface of low-k films to output trenches with high aspect ratio for the following filling them with copper. Two main physical mechanisms of interaction of ions and radicals with dielectric surfaces are sputtering and etching. 3D modeling is widely used to understand what is happening during etching process and to optimize etching technology. Postprocessing is important to see how films are changed during different stage of sputtering and etching. We found ScientificVR® very helpful for these purposes.