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Journal of Flow Visualization and Image Processing

Erscheint 4 Ausgaben pro Jahr

ISSN Druckformat: 1065-3090

ISSN Online: 1940-4336

The Impact Factor measures the average number of citations received in a particular year by papers published in the journal during the two preceding years. 2017 Journal Citation Reports (Clarivate Analytics, 2018) IF: 0.6 The Immediacy Index is the average number of times an article is cited in the year it is published. The journal Immediacy Index indicates how quickly articles in a journal are cited. Immediacy Index: 0.6 The Eigenfactor score, developed by Jevin West and Carl Bergstrom at the University of Washington, is a rating of the total importance of a scientific journal. Journals are rated according to the number of incoming citations, with citations from highly ranked journals weighted to make a larger contribution to the eigenfactor than those from poorly ranked journals. Eigenfactor: 0.00013 The Journal Citation Indicator (JCI) is a single measurement of the field-normalized citation impact of journals in the Web of Science Core Collection across disciplines. The key words here are that the metric is normalized and cross-disciplinary. JCI: 0.14 SJR: 0.201 SNIP: 0.313 CiteScore™:: 1.2 H-Index: 13

Indexed in

VISUALIZATION IN NANOTECHNOLOGY: LOW-K MATERIALS

Volumen 21, Ausgabe 1-4, 2014, pp. 47-50
DOI: 10.1615/JFlowVisImageProc.v21.i1-4.50
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ABSTRAKT

Porous dielectric materials with low dielectric constants (low-k, k = 1.8−2.5 have been used in integrated circuits for a long time to reduce RC time delays. Typical pores in low-k films are of size from 0.8 nm to 3.6 nm and can be observed with a scanning electron microscope. Normally, two-frequency discharge plasma is applied to modify surface of low-k films to output trenches with high aspect ratio for the following filling them with copper. Two main physical mechanisms of interaction of ions and radicals with dielectric surfaces are sputtering and etching. 3D modeling is widely used to understand what is happening during etching process and to optimize etching technology. Postprocessing is important to see how films are changed during different stage of sputtering and etching. We found ScientificVR® very helpful for these purposes.

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