Telecommunications and Radio Engineering
Erscheint 12 Ausgaben pro Jahr
ISSN Druckformat: 0040-2508
ISSN Online: 1943-6009
SJR:
0.185
SNIP:
0.268
CiteScore™::
1.5
H-Index:
22
Indexed in
MULTIFREQUENCY SELF-OSCILLATIONS IN SEMICONDUCTOR STRUCTURES WITH TWO COUPLED AVALANCHE P-N JUNCTIONS
Volumen 69,
Ausgabe 10, 2010,
pp. 925-937
DOI: 10.1615/TelecomRadEng.v69.i10.90
ABSTRAKT
Results of numerical solution to the equations of drift-diffusion model (DDT) of semiconductor pn - i - pn structures with abrupt avalanche p-n junctions are presented. The multifrequency self-oscillation mode in Ge-, Si- and GaAs-based pn - i - pn structures with a dc reverse bias has been found can operate. The excitation mechanism of self oscillations has been investigated and the generated spectrum has been analyzed. It is shown that semiconductor structures with abrupt p-n junctions represent a kind of the sustained-excited oscillation system. They can be used for designing multifrequency generators of the microwave frequency range.
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