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无线电物理和天文学期刊

每年出版 4 

ISSN 打印: 2152-274X

ISSN 在线: 2152-2758

UNSATURATED MODE AS ALTERNATIVE METHOD TO PROVIDE STABILITY OF LOW-NOISE AMPLIFIERS ON HIGH-ELECTRON-MOBILITY TRANSISTORS

卷 3, 册 2, 2012, pp. 179-185
DOI: 10.1615/RadioPhysicsRadioAstronomy.v3.i2.100
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摘要

A new method to provide the stability of low-noise HEMT-based amplifiers is proposed. The method consists in goal-oriented selection of a DC mode in the unsaturated (ohmic) segment of current-voltage curve. Stability -primarily that out-of-band − rises without noise characteristic degradation. In support of the offered method efficiency, the results of examination of amplifiers designed on different transistors are brought.

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