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雾化与喷雾
影响因子: 1.737 5年影响因子: 1.518 SJR: 0.814 SNIP: 1.18 CiteScore™: 2.2

ISSN 打印: 1044-5110
ISSN 在线: 1936-2684

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雾化与喷雾

DOI: 10.1615/AtomizSpr.2014010393
pages 23-45

THIN-FILM FORMATION BY USING FLASH-BOILING SPRAY

Motohiro Oshima
Fukui University of Technology, 3-6-1, Gakuen, Fukui City, Japan
Jiro Senda
Department of Mechanical Engineering, Doshisha University, Kyoto, Japan
Kozo Ishida
Horiba, Ltd., Kyoto City, Japan

ABSTRACT

A method for controlling evaporation by using chemical vapor deposition (CVD) with a mixed solution is proposed. In this method, called "flashing spray CVD", a mixed solution is transported through an injector at the top of the vacuum CVD chamber. The solution is evaporated by flashing when the chamber pressure is below the saturated vapor pressure of the solution, leading to formation of a lean, homogeneous vapor. This homogeneous vapor is then reacted with oxygen to form a film. In this paper, tetraethoxysilane (TEOS) was used as the precursor, and n-pentane was used as the low-boiling-point organic solvent because of its improvement of TEOS vaporization characteristics. The slit nozzle injector for the ambient condition was selected on the basis of spray shape revealed by optical measurements. Homogeneous SiO2 films on 300 mm diameter wafers could be formed by flashing spray CVD, and a slit nozzle that can be used to make films on wafers larger than 300 mm was produced. The best slit angle was determined from the results of magnification photography; LIF-Mie scattering was used in double-slit nozzles with various slit-to-slit angles, and the spray shapes obtained with those nozzles were compared using backlight photography. The best slit angle was found to be 180 degand the best slit-to-slit angle was found to be 120 deg.


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