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高温材料处理:国际期刊
ESCI SJR: 0.176 SNIP: 0.48 CiteScore™: 1.3

ISSN 打印: 1093-3611
ISSN 在线: 1940-4360

高温材料处理:国际期刊

DOI: 10.1615/HighTempMatProc.2018026506
pages 1-6

CHARACTERISTIC FEATURES OF HEATING SEMICONDUCTOR SILICON STRUCTURES DURING RAPID THERMAL TREATMENT IN THE VLSI TECHNOLOGY

Vitalii A. Bondariev
Department of Electrical Devices and High Voltage Technology, Lublin University of Technology, 38D Nadbystrzycka Str., Lublin, 20–618, Poland
Valentina A. Gorushko
JSC "INTEGRAL" − Holding Management Company, 121A Kazinets Str., Minsk, 220108, Belarus
Vladimir A. Pilipenko
JSC "INTEGRAL" − Holding Management Company, 121A Kazinets Str., Minsk, 220108, Belarus
Vitaly A. Solodukha
JSC "INTEGRAL" − Holding Management Company, 121A Kazinets Str., Minsk, 220108, Belarus

ABSTRACT

By means of the Fourier-spectroscopy method the influence of the conductivity type, doping level, orientation, as well as the state of an idle surface of silicon wafers on the absorption ratio during rapid thermal treatment and, consequently, on the temperature and rate of their heating is shown.


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