图书馆订阅: Guest
高温材料处理:国际期刊

每年出版 4 

ISSN 打印: 1093-3611

ISSN 在线: 1940-4360

The Impact Factor measures the average number of citations received in a particular year by papers published in the journal during the two preceding years. 2017 Journal Citation Reports (Clarivate Analytics, 2018) IF: 0.4 The Immediacy Index is the average number of times an article is cited in the year it is published. The journal Immediacy Index indicates how quickly articles in a journal are cited. Immediacy Index: 0.1 The Eigenfactor score, developed by Jevin West and Carl Bergstrom at the University of Washington, is a rating of the total importance of a scientific journal. Journals are rated according to the number of incoming citations, with citations from highly ranked journals weighted to make a larger contribution to the eigenfactor than those from poorly ranked journals. Eigenfactor: 0.00005 The Journal Citation Indicator (JCI) is a single measurement of the field-normalized citation impact of journals in the Web of Science Core Collection across disciplines. The key words here are that the metric is normalized and cross-disciplinary. JCI: 0.07 SJR: 0.198 SNIP: 0.48 CiteScore™:: 1.1 H-Index: 20

Indexed in

RF PLASMA PROCESS FOR HIGH PURITY SILICON

卷 10, 册 3, 2006, pp. 419-430
DOI: 10.1615/HighTempMatProc.v10.i3.60
Get accessGet access

摘要

The goal of this study is the metallurgical grade silicon purification in order to obtain photovoltaic grade silicon. The silicon purification process uses thermal plasma and an applied electrical field to the silicon liquid bath. The aim is to develop electrochemical reactions due to the interaction between the plasma bias and the liquid bath that leads to increase the kinetic of the purification. The solid silicon melted by RF thermal plasma (Argon, P = 20 kW) is under a bias DC current generated by the plasma or by independent electrical DC source. The experiments consist in the checking of the impurities extraction process on the liquid bath surface and the understanding of the role of the bath bias on this kinetic according to the nature of the impurity. Indeed, Optical Emission Spectroscopy permits to demonstrate, on line, the role of the sample positive biasing on the evaporation's kinetic of the cationic impurities of the melted silicon sample. Results show that for an applied polarization of 60 V (i = 900 mA), evaporation of calcium during the plasma treatment is increased by a factor 5 compared to a treatment without any current applied. Keywords: Plasma, Silicon, Purification, Electrochemistry, Spectroscopy

对本文的引用
  1. Shalav Avi, Photovoltaics literature survey (No. 53), Progress in Photovoltaics: Research and Applications, 15, 3, 2007. Crossref

Begell Digital Portal Begell 数字图书馆 电子图书 期刊 参考文献及会议录 研究收集 订购及政策 Begell House 联系我们 Language English 中文 Русский Português German French Spain