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ISSN 打印: 0040-2508

ISSN 在线: 1943-6009

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CORRECTED DRAIN CURRENT MODEL FOR SCHOTTKY BARRIER CYLINDRICAL GATE ALL AROUND FET CONSIDERING QUANTUM MECHANICAL EFFECTS

卷 79, 册 5, 2020, pp. 433-442
DOI: 10.1615/TelecomRadEng.v79.i5.60
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摘要

In this paper, we have proposed a novel compact drain current model of Schottky Barrier Cylindrical Gate All Around FET (SB-CGAAFET) to resolve the short channel effects and enhance the performance of the device. In SB-CGAAFET structure, semiconductor material in Source/Drain is replaced with Aluminum, Copper, Gold, and Platinum metals. Due to this, there is reduction in resistance at Source-channel and channel-Drain interface. We have shown the impact of channel diameter on energy gap of the channel. We have also analyzed quantum mechanical effects in the device and plotted the corrected drain current characteristics. The I-V characteristics of the device is analyzed with the change in channel diameter (2 nm to 10 nm), change in channel length (10 nm to 15 nm), change in Schottky barrier height, different Source/Drain material (Aluminum, Copper, Gold, and Platinum) and change in channel temperature (0 to 300 K). We have plotted the graph between transmission probability and gate to source voltage with different channel diameter. Modelling of SB-CGAA FET device is done using MatLab code.

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对本文的引用
  1. Jung Hakkee, Analytical models of threshold voltage and drain induced barrier lowering in junctionless cylindrical surrounding gate (JLCSG) MOSFET using stacked high-<i>k</i> oxide, AIMS Electronics and Electrical Engineering, 6, 2, 2022. Crossref

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