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电信和无线电工程
SJR: 0.203 SNIP: 0.44 CiteScore™: 1

ISSN 打印: 0040-2508
ISSN 在线: 1943-6009

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电信和无线电工程

DOI: 10.1615/TelecomRadEng.v67.i7.80
pages 655-661

Numerical Simulation of Avalanche Breakdown in the GaAs MESFET

L. N. Akhramovich
Tavriya National University, Yaltinskaya 4, Simpheropol, 95022, Ukraine
S. A. Zuev
Tavriya National University, 4, Vernadskogo ave., Simpheropol, 95007, Ukraine
V. V. Starostenko
Tavriya National University, 4, Vernadskogo ave., Simpheropol, 95007, Ukraine
V. Yu. Tereshchenko
Tavricheskii National University, 4, Vernadskogo Ave., Simferopol, 95007, Ukraine
G. I. Churyumov
Kharkov National University of Radio Engineering and Electronics, 14, Lenin Ave, Kharkov, 61166; Tavriya National University, 4, Vernadskogo ave., Simpheropol, 95007, Ukraine
D. A. Unzhakov
Tavriya National University, 4, Vernadskogo ave., Simpheropol, 95007, Ukraine
Ye. V. Grigor'ev
Tavriya National University, Yaltinskaya 4, Simpheropol, 95022, Ukraine

ABSTRACT

Paper is devoted to the numerical simulation of the occurence and growth processes of an avalanche breakdown in the GaAs MESFET in accordance with the electrical regimes and the active-region geometry.


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