每年出版 12 期
ISSN 打印: 0040-2508
ISSN 在线: 1943-6009
Indexed in
LOCAL MW HEATING-UP KINETICS IN SEMICONDUCTORS AND DIELECTRICS
摘要
A rigorous numerical simulation was used to ascertain the quantitative characteristic properties of highly local heating kinetics in semiconductuctors and dielectrics by means of near-field coaxial probes. The heating-up rate and locality are shown to be drastically increased, as the cross-section of the point in these types of probes decreases to the range of values in units of microns. This effect appears to be particularly more pronounced when the probe point is of spherical shape. The attained temperature holding locality is associated with the heat conduction of an objects material and tends to be impaired in comparison with the crossection of the probe point when the excitation pulse duration gets longer. As far as the micron sections of the point is concerned, the typical duration of the excitation pulse does not exceed ten fractions of a microsecond. The authors of the present paper suggest that the problem of holding a present temperature and minimizing the locality loss be partially resolved through the use of the sophisticated pulse power supply system in the MW micromodifier in question.